Abstract

(Pb,Sr)TiO3 (PST) films were deposited on Pt/SiO2/Si by pulsed laser deposition at low substrate temperatures (Ts) ranging from 300 to 450 °C. The loss in remnant polarization (Pr) and coercive field (Ec) is found to be less than 17% after 1010 switching cycles when Ts is higher than 350 °C. It is also suggested that the leakage current is reduced when Ts increases up to a temperature of 400 °C. However, PST films deposited at 450 °C may produce serious Pb–O volatilization, resulting in the deterioration of the crystallinity and high leakage currents. As a result, the 400 °C-deposited PST film reveals the lowest leakage current, nearly fatigued-free J–E characteristics after 1010 switching cycles, and the best breakdown property, attributed to the enhanced crystallinity and low concentration of defects.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call