Abstract
The depth-resolved electrical characteristics of n- and p-type GaAs/(In, Ga)P/GaAs heterojunctions are examined by capacitance–voltage measurements. Different epitaxial growth conditions are chosen to produce heterointerfaces with (In, Ga)P layers of various degrees of order. Irrespective of the conduction type of the heterojunction studied, we find positive [negative] sheet charges at the (In, Ga)P-on-GaAs [GaAs-on-(In, Ga)P] interfaces. The density of both interfacial charges increases with increasing degree of (In, Ga)P order. The experimental results can be completely explained by taking into account the spontaneous polarization of ordered (In, Ga)P. The polarization difference between ordered (In, Ga)P and GaAs (no polarization) results in opposite sheet charges at the two complementary interfaces with GaAs, in accordance with theoretical predictions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
