Abstract
We report the observation of strongly polarization sensitive sub-band gap oscillatory features in the contactless electroreflectance spectrum of InxGa1−xP layers grown on GaAs (001) substrates. At a given energy in the sub-band gap region, the peak strength of these oscillatory features decreases from a positive maximum to a negative minimum passing through zero as the polarization of the incident probe beam is rotated by 90° from [11̄0] direction to [110] direction in the (001) plane. The origin of this phenomenon is explained on the basis of optical interference coupled with linear electro-optic effect induced changes in the sub-band gap refractive index of the InxGa1−xP layers. Numerical simulations based on the above mechanism are shown to reproduce the polarization dependent observations quite well.
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