Abstract
Gallium nitride (GaN) films have been grown on sapphire(0001) and 6H-SiC(0001) substrates without a buffer layer. Micro-structural analysis was performed by TEM investigations. Under identical experimental conditions, the GaN films showed different polar characteristics when deposited onto different substrates. Various techniques, such as convergent beam electron diffraction and chemical etching were employed to determine the polarity of the GaN films. The present paper implies that films grown by laser induced reactive epitaxy (LIRE) show the same dependence of polarity on substrates and growth conditions as layers grown by molecular beam epitaxy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
