Abstract
We have evaluated the polarity of single-crystalline InN using coaxial impact collision ion scattering spectroscopy (CAICISS). The polarity of rf-MBE grown InN on sapphire was found to depend on growth temperature. Nitrogen polarity was observed for low temperature grown InN at 300 °C. On the other hand, high temperature grown InN at 550 °C showed primarily indium polarity. Furthermore, a mixture of indium polarity and nitrogen polarity was observed for two-step grown InN. A GaN cap layer was grown on InN to infer the polarity of InN. From reflection high-energy electron diffraction observations, GaN grown on low temperature grown InN showed a (3 × 3) reconstruction pattern, whereas GaN grown on high temperature grown InN showed a (2 × 2) reconstruction pattern. These results suggest that the polarity of InN is much more sensitive to growth temperature compared with other nitride semiconductors.
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