Abstract
The effect of the metallic antiferromagnet (AF) γ-FeMn and the AF-semiconductor NiO alloys on the polarity of anomalous Hall resistivity loops is examined in perpendicularly biased [Pt(2nm)∕Co(0.4nm)]15∕AF(3nm)∕[Co(0.4nm)∕Pt(2nm)]15 (AF=NiO, FeMn) multilayers. The Hall resistivity exhibits negative polarity for AF=NiO and positive polarity for AF=FeMn. These differences are explained by the reduced spin-diffusion-length effects and the specular reflection of electrons at FeMn and NiO interfaces, respectively. In addition, it is shown that a sandwiched AF thin layer stabilizes the exchange-bias effect via interlayer coupling between top [Co(0.4nm)∕Pt(2nm)]15 and bottom [Pt(2nm)∕Co(0.4nm)]15 structures in multilayers with strong perpendicular magnetic anisotropy.
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