Polarity dependent carbon enrichment on 6H–SiC{ [formula omitted]} due to low energy ion bombardment

Abstract

Ion sputtering induced surface composition changes by applying various ions (He +, Ne +, Ar +, Xe +) in the energy range of 0.2–1.5 keV, was measured by AES on the polar faces of 6H–SiC{0 0 0 1}. Carbon enrichment was observed on both faces, and it was different if Ne +, Ar +, Xe + ion sputtering was applied with ion energy lower than 0.4–0.8 keV (depending on projectile); no different enrichment was found for He + ion bombardment at any energy (in this range). Thus C/Si ratio measured by AES after low energy ion (e.g. Xe +) bombardment can be used to identify polarity of the surface.