Abstract
MOS devices were fabricated with dry thermal oxides, nitrided oxides and annealed nitrided oxides. The anneals were performed in O2 or N2 ambients using rapid thermal processing. Charge to breakdown, Qbd, and interface state generation, ΔDit for these devices were studied using Fowler–Nordheim electron injection. The gate bias polarity dependence of Qbd and ΔDit was investigated. A model is proposed to explain the observed dependence of these quantities on the polarity of injection and process parameters.
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