Abstract
Abstract : AlGaN can be used for the fabrication of lateral polar structures (LPS) by a periodic inversion of the c-axis as achieved by a polarity control scheme during its growth by metal organic chemical vapor deposition (MOCVD). These structures can be used for second harmonic generation in the ultraviolet spectral region, as well as for lateral p/n-junctions. The two major challenges addressed in this work exist in the general implementation of the AlGaN technology and in the fabrication of AlGaN LPS, and both prevent the realization of AlGaN UV-emitters. These challenges are: (1) the presence of a high concentrations of native defects and extrinsic impurities in AlGaN that can reduce the efficiency of optoelectronic devices, especially in the case of high doping with Mg or Si, and (2) as typically observed, a growth rate difference that exists during the simultaneous growth of III- and N-polar domains adjacent to each other in a LPS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
