Abstract

We consider the elastic scattering of polaritons due to quantum well width or alloy composition fluctuations in semiconductor microcavities in the strong coupling regime. For a simple defect model, properly taking into account both the exciton-photon and the exciton-disorder interactions, an analytical expression for the lower cavity polariton scattering cross-section is obtained which shows, in particular, a very large enhancement at energies corresponding to bare exciton localized levels. The implications of our results for the question of motional narrowing of cavity are discussed.

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