Abstract
In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio of 18.8 dB was obtained for a single pixel with an on-chip polariser, where the line/space widths have the finest pitch obtainable by 65-nm technology. Electrical crosstalk between pixels is reduced by over 25% using a guard ring structure. Polarisation imaging by the sensor was also performed.
Highlights
Integration of optical functional elements on a complementary metal-oxide semiconductor (CMOS) image sensor enables miniaturisation of optical measurement systems [1,2,3,4,5,6]
Tokuda et al proposed an image sensor with an on-chip metal grid polariser composed of a metal wiring layer obtained using 0.35-μm standard CMOS technology [1]
To measure the extinction ratio of an on-chip polariser, linearly polarised light was focused on a pixel, and the output was obtained
Summary
Integration of optical functional elements on a complementary metal-oxide semiconductor (CMOS) image sensor enables miniaturisation of optical measurement systems [1,2,3,4,5,6]. Tokuda et al proposed an image sensor with an on-chip metal grid polariser composed of a metal wiring layer obtained using 0.35-μm standard CMOS technology [1]. The extinction ratio of the polarisation analysing CMOS image sensor in 0.35-μm standard CMOS technology is 3.3 dB [1]. We achieved an extinction ratio of 16.1 dB with fine pitch metal wire grids obtained using 65-nm standard CMOS technology [8, 9]. Based on this result, in the present study, we design and fabricate an image sensor with high-extinction-ratio polarisers using 65-nm standard CMOS technology.
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