Abstract
CuInSe2 thin films were grown by vacuum evaporation of presynthesized material from a single source. The room-temperature photoconductivity spectra of the film show a strongly dependence on the evaporation conditions and, especially, on the evaporation temperature. A shift of the long-wavelenght photoactive absorption edge and the evolution of the photoconductivity spectra of the films were observed. The influence can be explained by allowing for deviations of the compositions of the condensed phase from CuInSe2 stoichiometry.
Highlights
CuInSe2 thin films were grown by vacuum evaporation of presynthesized material from a single source
To obtain photosensitive structures on the specular surface of the electrically homogeneously p-CIS films, without preliminary heat treatment, they were deposited by vacuum thermal evaporation at temperatures of 150 to 200◦ C, through a masking layer of n-CdS
The possibility to improve the photoelectric parameters of the film heterostructures based on CIS by heat treatment well known.[3]
Summary
Photosensitive structures, consisting of a heterostructures of p-CuInSe2 (CIS) film (magnetron sputtering) with a n-CdS film (vacuum thermal evaporation), have been fabricated and studied. These heterocontact have a current photosensitivity of 5 mA/W in the spectral region between the band gaps of CIS and CdS. Heat treatment of the film heterocontact in vacuum at 200-400◦ C influence on transformation of the spectral dependence of the photosensitivity contour.
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