Abstract
The effects of spatial localization of phonons or their correlation functions to finite distances in alloy semiconductors on polar optical phonon scattering of hot carriers are modeled analytically. Despite the possibility of increased numbers of carrier-scattering-active phonon modes, it is demonstrated that phonon localization in alloys should have little if any effect on the total polar optical scattering rate for charge carriers coupled to equilibrium phonon populations. Further, it is demonstrated that phonon localization may have a beneficial effect on hot carrier transport by reducing the possibility of exciting nonequilibrium phonon populations. These results are obtained without assuming any specific functional form or degree of phonon localization; rather, calculations rely on the inherent orthogonality and mathematical completeness of the classical vibrational modes over the crystal lattice degrees of freedom.
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