Abstract
The mobility of a two-dimensional electron gas (2DEG) in a rectangular potential well formed in a AlGaAs/GaAs/AlGaAs structure scattered by polar-optic phonon is calculated by an iterative solution of Boltzmann equation. The values are significantly different from those calculated by using a relaxation time. The polar-optic mobility is found to dominate over acoustic mobility over a temperature range of 100–300 K when the well thickness is about 10 nm. The mobility values for 2DEG are, however, found to be lower than the bulk values.
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