Abstract
An ultraconfined compound semiconductor device is investigated by using a two-dimensional iterative Poisson solver (TIPS). The device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and implant dose of the selective doping, and it is limited by the lateral straggle of the implantation. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
