Point Source X-Ray Lithography System for Sub-0.15 Micron Design Rules

Abstract

Abstract : The team of Sanders, a Lockheed Martin Company, Suss Advanced Lithography, (SAL), Science Research Laboratory, (SRL), and the Center for X-Ray Lithography, (CXrL), at the University of Wisconsin are developing a point source X-Ray lithography system for sub-0.15 micron design rules. The system will consist of a SAL developed stepper, an SRL developed Dense Plasma Focus, (DPF), X-Ray source, and a CXrL developed beam line. The system will be delivered to Sanders in the spring of 1999. Sanders is leading development of gallium arsenide wafer processing technology for the MMIC T gate process, and is carrying out a prototype fabrication run of 35 GHz MMIC low noise amplifiers. During development of the point source system, the processing work has been conducted at CXrL using the CXrL synchrotron source and SAL Model 4 stepper. The program has been funded in two Phases. The first phase of 15 month duration, running from January, 1997 to April, 1998 concentrated on development of components for the lithography system. Beginning with an existing machine that used spark gap switching, SRL has developed an all solid state driver and improved head electrode assembly for their dense plasma focus X-Ray source. Likewise, SAL has used their existing Model 4 stepper installed at CXrL as a design starting point, and has developed an advanced stepper test bed. The test bed includes the frame, coarse and fine stages, wafer load/unload system, ALX3 alignment system and controlling software, and will be completed in Phase 2 to become the next generation stepper (Model 5 or SAL designation XRS200012).