Abstract
The defect subsystem of PbCdTe crystals was analyzed using the method of thermodynamic potential. The predominant type of point defects and their effect on the concentration of free charge carriers have been estimated. It was established that the electroneutral substitution defect CdPb is the dominant point defect in the investigated system. Furthermore, the carrier concentration of a solid solution is determined by the concentration of single-ionized interstitial cadmium atoms and single- and double-ionized vacancies of lead. The donor effect of cadmium in lead telluride is rather weak due to the efficient self-compensation processes. Consequently, n- or p-type conductivity materials with the optimal composition for thermoelectric application carrier concentrations (1018–1019 cm−3) could be obtained by introducing the stoichiometric metal/chalcogenide component of the base material (Pb/Te) or by the implementation of additional donor/acceptor impurities.
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