Abstract
Abstract Spectral dependences of the reflectance R in the plasma-resonance frequency range have been measured on (0001) cleavage faces of Sb2–x In x Te4 (x = 0·0–0·41) single-crystal samples grown from elements of 99·999% purity by means of a modified Bridgman technique. The plasma-resonance frequency (and hence the concentration P of holes) has been determined from the interpretation of the experiment R = f(v) curves. The dependence on P on the content of In atoms shows a monotonic decrease from a value of 6–4 x 1025 m−3 for x = 0 to 1 × 1025 m −3 for x = 0·41. The account for the decrease in the concentration of holes, we propose a model based on the assumption that the introduction of In atoms into the crystals results in a decrease in the concentration of antisite defects and, at the same time, in a change in the concentration of vacancies in the Te sublattice of Sb2Te3 crystals. The P = f(x) dependence for Sb2–x InxTe3 crystals is compared with the variation in the concentration of free charge carrie...
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