Abstract
A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd 1− x Zn x Te. In Cd 0.95Zn 0.05Te crystals, Cd i ·· is found to be the main point defect at high Cd partial pressures, and V″ Cd at low partial pressures. On the Te-rich side, the concentrations of Te ca ·· and Te ca · are sufficiently high to significantly influence the electrical properties of Cd 0.95Zn 0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd 0.95Zn 0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd 0.95Zn 0.05Te is suggested following calculations based on the model.
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