Abstract
Point defects and impurities play an important role in the properties of III-nitride devices, doping the material n- or p-type, compensating such dopants, or acting as recombination centers. Mg incorporates on the Ga site (MgGa) and is the only effective p-type dopant in GaN, though incorporation is limited by solubility; n-type conductivity in GaN is caused by ON or SiGa, though these form DX centers in some AlxGa1-xN alloys. Native defects such as Ga and N vacancies act as compensating centers. CN and Ga vacancy complexes are recombination centers, and likely sources of the ubiquitous yellow luminescence in GaN.
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