Abstract
Abstract Crystalline Si ( c -Si) and relaxed amorphous Si ( a -Si) have been ion-bombarded. The kinetics and temperature dependence of the heat released on annealing of these materials are found to be qualitatively similar for temperatures lower than epitaxial crystallization temperatures (550°C). This behavior suggests a close similarity between the mechanisms of structural relaxation in a -Si and defect annihilation in c -Si. The heat release measurements imply that ion bombardment generates a variety of point defects in both a -Si and c -Si.
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