Abstract
A direct method of determining the effective measure of the interaction of point defects with dislocation loops is proposed. A system of partial differential rate equations for loop growth is formulated and is solved by a numerical method. An in-situ HVEM irradiation experiment was conducted to study growth kinetics of dislocation loops in Ni at 450/sup 0/C. It is found from systematic variations of the vacancy migration energy, E/sub v//sup m/, and the preference factor of dislocation loops for self-interstitials, delta/sub i/, that delta/sub i/ = 0.06 and E/sub v//sup m/ = 1.2 eV together yield reasonable agreement between the theoretical model and the experimental observations.
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