Abstract
A direct method of determining the effective measure of the interaction of point defects with dislocation loops is proposed. A system of partial differential rate equations for loop growth is formulated and is solved by a numerical method. An in-situ HVEM irradiation experiment was conducted to study growth kinetics of dislocation loops in Ni at 450/sup 0/C. It is found from systematic variations of the vacancy migration energy, E/sub v//sup m/, and the preference factor of dislocation loops for self-interstitials, delta/sub i/, that delta/sub i/ = 0.06 and E/sub v//sup m/ = 1.2 eV together yield reasonable agreement between the theoretical model and the experimental observations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
