Abstract
In the present paper the solid phase epitaxial (SPE) growth and silicidation in Ni-implanted silicon have been studied. The dependences observed have been explained in terms of the phenomenological model of the SPE growth and proposed mechanism of the point defect emission during the silicide formation. It is shown that the flux of interstitial type point defects onto the amorphous-crystalline interface enhances the rate of the SPE growth.
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