Abstract

The growth of a new silicide phase by a solid-state reaction is usually believed to be accompanied by the generation of excess point defects. The objective of this study was to investigate if vacancy injection in general is related to the condition that the silicon atom is the dominant moving species during silicide formation and to estimate the number of injected point defects (silicon interstitials or vacancies). Deep level transient spectroscopy was used to monitor the defect generation. The results indicated a net silicon interstitial injection, with a net generation rate of about 10 10-10 12 cm -3 s -1, during the silicide formation.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.