Abstract
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create a diode containing a self-interstitial-rich optically active region from which the zero-phonon emission line at 1218 nm originates.
Highlights
Significant effort has been devoted to the development of light emitters based on Si
We present a novel approach to enhance light emission in Si and demonstrate a sub-bandgap light emitting diode based on the introduction of point defects that enhance the radiative recombination rate
In this paper we present a new approach to sub-bandgap light emitting diodes in silicon based on point defect engineering
Summary
Significant effort has been devoted to the development of light emitters based on Si. Sub-bandgap LEDs have been reported mostly using deep-level impurities [8,9,10] as light-emitting "centers", with some reports of emission from line defects such as dislocations [7]. Such sub-bandgap emission in silicon is important to address the wavelength range of optical communications in a way compatible with on-chip silicon electronics [1]. In this paper we present a new approach to sub-bandgap light emitting diodes in silicon based on point defect engineering. Our materials processing technique, combining ion implantation and pulsed laser melting (PLM), permits the fabrication and retention of high concentrations of optically active point defects and is compatible with existing silicon technology
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