Abstract
Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance—voltage (C—V) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm−2 in structures are extracted by analysis of C—V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C—V results.
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