Abstract
The self-compensation effect leading to limitations in free carrier density rise with increasing dopant contents in CdTe was studied. Using the radiotracer technique, diffusivity, solubility and high-temperature electrical properties' measurements, dopant self-compensation was observed in CdTe doped with In(Cu, Ge or Sn). The results are discussed in the framework of Kröger's point defect quasichemical reactions theory. Four theoretically possible types of dopant self-compensation are derived.
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