Abstract
The method of X-ray diffuse scattering is used to characterize the point defect structure in Pb1−xInxTe (x=0.005–0.055) single crystals. It is found that clusters of both vacancy and interstitial defects are present in all samples, but the ratio of their concentrations varies depending on the doping level. The clusters of interstitial point defects are supposed to be dislocation loops formed from Pbiand Tei, while the clusters of vacancy-type defects may be formed from complexes of In atoms and tellurium vacancies.
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