Point defect aggregates in boron doped dislocation-free Czochralski silicon crystals

Abstract

Bragg line profile (BLP) and high-resolution diffuse X-ray scattering (DXS) measurements have been obtained in boron Czochralski Si single crystals. The dislocation-free crystals were doped with a B concentration ( C B) from 10 14 to 10 19cm -3 and have been analysed in a double crystal diffractometer using highly collimated Cu Kα 1 radiation. The BLP analysis proved that the (111) plane is the most affected by the doping process particularly for the higher concentrations of C B (⪆10 18 cm -3). DXS results have shown the presence of clusters with typical size parameters of some tens to some thousands of ångströms. The larger clusters have a prevailing interstitial nature and the smaller ones a vacancy nature, except for C B ∼ 10 19 cm -3 when the clusters have only an interstitial nature.