Abstract
A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β ≃ 60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3 × 12 µm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
