Abstract
A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β ≃ 60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3 × 12 µm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base.
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