Abstract
p–n junctions formed by BF 2 ion implantation and pulse laser annealing were studied. Boron atoms implanted were sufficiently activated without being subject to diffusion during laser annealing by optimizing the irradiation energy. In the diffusion-free annealing condition, p–n junctions were formed using various values of implantation energy with the same dose. The leakage current increased with implantation energy. The crystallinity of the junctions was investigated using cross sectional transmission electron microscopy. It was found that all defects originated from the interface between the amorphous layer formed by ion implantation and the underlying crystal silicon substrate. In addition the relation between the defect depth and the leakage current was investigated.
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