PN-junction diode behavior based on polyaniline nanotubes field effect transistor

Abstract

Polyaniline (PANI) nanotubes configured as a field effect transistor (FET) exhibits a p–n junction diode behavior. The forward-bias current can be modulated by a gate voltage; turning on at negative gate voltage and turning off at positive gate voltage. An energy band diagram model has been proposed to explain the rectifying effect of the PANI nanotubes FET (PNT-FET). All the four different forward bias conduction mechanisms of a typical p–n junction diode can be identified for this PNT-FET using a semi-log graph to confirm this resemblance.