Abstract
An ultra-low energy high dose B-based implant was processed after source and drain region formed and before metal sillicide contact formed for PMOS devices. B beam-line (BL) implant and plasma doping (PLAD) using either B <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> or BF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> gases were utilized for this process. PMOS device performance showed significant improvements, including ~70 percent lower contact resistances, similar threshold and sub-threshold characteristics, and ~15 percent higher drive currents without degrading off current. PLAD is preferred on this application because of its much higher throughput in this process regime.
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