Abstract
Lead based relaxor ferroelectric thin films can become very useful due to their excellent electrical properties, provided the growth difficulties and high cost of fabrication which have stymied their applications are overcome. Our work describes a systematic study of establishing a set of process conditions for reproducible depositions of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN-PT) thin films on La0.67Ca0.33MnO3 (LCMO) seeded Pt/TiO2/Glass substrates. Films were grown at ambient temperature using RF- magnetron sputtering. Single phase PMN-PT films could be obtained by ex situ thermal annealing in air for 2 h at temperatures of 550 and 650 °C. Films annealed at temperatures lower than 550 °C and films deposited without the LCMO buffer layer showed presence of pyrochlore phase. Effect of annealing temperature, on the microstructure, dielectric and ferroelectric properties of the PMN-PT films has been investigated. Scanning electron micrographs of single phase PMN-PT films show a bimodal grain size distribution for the thin films annealed at 550 and 650 °C. The films annealed at 650 °C yielded a dielectric constant of 1300 and a remnant polarization (2Pr) of 17 μC cm−2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
