Abstract
We have successfully fabricated x(0.65PMN-0.35PT)–(1−x)PZT (xPMN-PT–(1−x)PZT), where x is 0.1, 0.3, 0.5, 0.7 and 0.9, thick films with a thickness of approximately 9μm on platinized silicon substrate by employing a composite sol–gel technique. X-ray diffraction analysis and scanning electron microscopy revealed that these films are dense and creak-free with well-crystallized perovskite phase in the whole composition range. The dielectric constant can be controllably adjusted by using different compositions. Higher PZT content of xPMN-PT–(1−x)PZT films show better ferroelectric properties. A representative 0.9PMN-PT–0.1PZT thick film transducer is built. It has 200MHz center frequency with a −6dB bandwidth of 38% (76MHz). The measured two-way insertion loss is 65dB.
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