PMJ 2002 Panel Discussion Review: Lithography Strategy from 90 to 65 nm Nodes: ArF, F 2 , or EPL?

Abstract

We discussed the following topics at the panel discussion of Photomask Japan 2002. 1) Pushing the limit of ArF lithography: How far ArF lithography will extend? 2) Current status and issues for F 2 lithography, 3) Current status and issues for EPL, 4) Current status and issues for F 2 and NGL masks, 5) Lithography tool selection from 90- to 65- nm nodes. ArF lithography could extend to 65-nm node by using alternating phase shift masks. F 2 lithography and EPL are not yet established and we need to solve many issues for practical applications. The choice of lithography tools in 65-nm node depends on devices and layers. Multiple lithography tools might be used in 65-nm node.