Abstract
This paper describes the pulsed laser deposition (PLD) technology of making ZnO thin films free from deep level emission (a problem of conventionaly grown ZnO films). A visible broad peak (deep level emission) is often seen in the ZnO photoluminescence (PL) spectrum and also a sharp exciton peak. ZnO films PLD-grown on La-doped (0.5%) SrTiO 3 substrates were compared with those grown on SrTiO 3 substrates. When grown on La-doped SrTiO 3 substrate, the deep level emission disappeared almost completely. Even when (LaSr)TiO 3 film was inserted between the ZnO film and SrTiO 3 substrate, deep level emission was suppressed to a large extent. Using the present result, we fabricated a NiO/ZnO/La x Sr 1− x TiO 3 structure and characterized it.
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