Abstract
We report on the growth of films using pulsed laser deposition and their structural and electrical transport properties. thin films were doped with 5 at% Mg for p-type properties. Epitaxial films of were grown on c-plane sapphire substrates. The effects of growth temperature and oxygen pressure on film properties were investigated. The main phase of delafossite was appeared above the growth temperature of . The thin film grown at showed the highest conductivity, reaching 19.6 S/cm while higher growth temperatures over led to lower conductivity; the thin film grown at showed 0.02 S/cm.
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