Abstract
The un-doped and platinum-doped In2O3 thin films were deposited for the investigation of platinum doping effect on the structural, morphological and electrical properties of In2O3 based metal-semiconductor-metal infrared photodetectors. The In2O3 metal-semiconductor-metal infrared photodetectors were also fabricated for obtaining the electrical characteristics such as the carrier recombination lifetime, diffusion length, carrier density, mobility, saturation current, barrier height, series resistance and ideality factor. It was seen from the characterization results that the Pt dopant usage has a prominent effect on properties of In2O3 metal-semiconductor-metal infrared photodetectors which are not extensively studied in the literature.
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