Abstract
AbstractThe contamination of oxide films caused by sputtering of the cathode (Pt) during the anodization of GaAs in an oxygen plasma was investigated. Platinum was found to accumulate near the surface of the oxide, its concentration decreasing rapidly towards the oxide‐semiconductor interface. No correlation of Pt content with deep level spectra from GaAs could be established. The amount of platinum built into the oxide depends sensitively on growth conditions.
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