Plated wire memory with flexible keeper

Abstract

The characteristics of plated wire memories have been improved by the use of flexible ferrite keepers. Though the multilayered film (8900 Å thick) deposited onto 7% Ag-Cu substrate plays the most important part in a plated wire memory, emphasis is placed on the structure of the keeper which made the coupling of word lines with thin film the most effective at the points where cells are formed. With this effect, word current can be reduced approximately 25% and bit density can be increased. High output voltage is a feature of the memory. Figures are presented showing the structure of the keeper and its characteristics in comparison with those of a nonmagnetic keeper. For an application of this memory, a 32 Kbyte memory system is described. High speed (120 ns access, 200 ns read cycle, 375 ns write cycle) is a feature of the system.