Abstract
Engineered defective sites on semiconductors offer opportunities for the design of novel optoelectronic devices with functions that are not intrinsically available. It is demonstrated that composite photonic crystal can be created on GaAs wafers by arrayed indentation. The indentation pattern supports photochemical cultivation of Ag nanoplates with a new principle involving plasticity promoted band engineering. It also provides a variety of novel functions not originally available in either GaAs or Ag nanostructures. In particular, this unique structure exhibits white light photoluminescence emission, strong enough to be perceived by the naked eye upon excitation with a 375 nm laser. This plasticity mediated principle opens a new avenue for the design and fabrication of novel composite semiconductor/metal structures with exotic properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
