Abstract
Implantation of As ions into (111) surfaces of V single crystals at room temperature results in the formation of supersaturated solid solution. Channeling studies revealed that at 14 at.% As the implanted region starts to rotate with respect to the bulk. The angle of rotation is perpendicular to a (110) plane, the slip plane, and increases with increasing As concentration. At 20 at.% As polygonization of the implanted region occurs. Results from (110) surfaces support the assumption that the implantation process causes a slip mechanism which gives rise to the rotation and the polygonization of the implanted layer.
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