Abstract

Abstract Plasmonic technology offers one of the most promising solutions to achieve on-chip integration of nanoscale and fast modulation circuits using surface plasmon polaritons (SPPs) as the information carriers. However, the potential of modulation speed of plasmonic signals has not been fully tapped. In this paper, we have demonstrated the plasmonic signal can be modulated at the bandwidth of sub-GHz (>100 MHz) via the on-chip integration of tunnel junctions. We also find that the lifetime of tunnel junctions under AC conditions can be improved significantly compared with the DC counterparts, which allows us to investigate and visualize the real-time breakdown process of tunnel junctions. Our implementation of plasmonic signal modulation at sub-GHz frequency paves the way toward potential industrial applications of on-chip plasmonic circuits.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.