Abstract
Plasmonic properties of the diamond like carbon nanocomposite films with embedded silver nanoparticles with patterned nanohole arrays were analyzed in this study. The films were deposited by unbalanced reactive magnetron sputtering of silver target. Nanopatterning of the films was performed by combining electron beam nanolithography and ion beam etching techniques. Modeling of plasmonic properties was done using the classical Maxwell-Garnett theory. Modeling data and experimental results were in good accordance. Formation of the nanohole pattern in diamond like carbon films doped with silver resulted in decreased intensity of the surface plasmon resonance absorbance peak. No new absorbance or transmittance peaks were observed after the nanopattering. It was explained by extraordinary transmission effect in nanostructured DLC : Ag film films due to plasmon polariton resonance inside of the nanoholes. DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13193
Highlights
Nanocomposites consisting of the dielectric matrix with embedded group IB metal (Au, Ag, Cu) nanoparticles received considerable interest of the researchers [1, 2]
Plasmonic properties of the nanocomposite can be controlled by using dielectric matrix of the appropriate refractive index [2]
After the fabrication of the nanoholes array in polymethyl methacrylate (PMMA) by e-beam nanolithography, Ar ion beam etching of DLC : Ag film followed
Summary
Nanocomposites consisting of the dielectric matrix with embedded group IB metal (Au, Ag, Cu) nanoparticles received considerable interest of the researchers [1, 2]. Dielectric matrix protects metal nanoparticles from the unwanted environmental effects such as oxidation In such a way main disadvantage of the Au nanoparticles – oxidation resistance [3] – can be successfully eliminated enabling exploitation advantages of other group IB metals such as stronger surface plasmon resonance effect in the case of silver [3, 4]. Another important advantage of the plasmonic nanocomposites in comparison with nanoparticles is their compatibility with semiconductor device fabrication technology.
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