Plasmonic nanoantennas on VO2 films for active switching of near-field intensity and radiation from nanoemitters.

Abstract

In this paper, we propose novel plasmonic switches based on plasmonic nanoantennas lying on top of a thin film of a phase change material such as vanadium dioxide (VO2), such that the near-field properties of these nanoantennas can be actively switched by varying the phase of the VO2 film. We employ finite difference time domain (FDTD) simulations to first demonstrate that the near-field intensity in the vicinity of the plasmonic nanoantennas can be substantially switched by changing the phase of the vanadium dioxide film from the semiconductor state to the metallic state. We demonstrate that a ring-bowtie nanoantenna (RBN) switch can switch the near-field intensity by ∼ 59.5 times and ring-rhombus nanoantenna (RRN) switch can switch the near-field intensity by a factor of ∼ 80.8. These values of the maximum intensity switching ratios are substantially higher than those previously reported in the literature. In addition, we optimize the various geometrical parameters of the plasmonic switches to maximize the intensity switching ratio and to understand how the different parameters affect the performance of the plasmonic switches. In this paper, we also show that the intensity of emission from a nanoemitter placed in the gap between the two arms of a plasmonic nanoantenna can be significantly switched by changing the phase of the VO2 film between its semiconductor state and the metallic state. To quantify the switching of emission from the nanoemitters placed in the near-field of the nanoantennas, we define and calculate a parameter, called FESR, the ratio of fluorescent enhancement factors in the on-state and off-state of the plasmonic switch. The maximum fluorescence enhancement switching ratio (FESR) of ∼ 163 is obtained for the RBN switch and FESR of ∼ 200 is obtained for RRN switch. The plasmonic switches being proposed by us can be easily fabricated by employing the conventional nanofabrication and thin film deposition processes.