Abstract

This study experimentally examined the plasmonic near-field and far-field effects of two-dimensional (2-D) indium-nanoparticles (In-NPs) embedded within an anti-reflective SiO2 layer on the optical and electrical characteristics of silicon solar cells. The dimensions and profiles of the 2-D In-NPs were derived from scanning electron microscope images (top-view and side-view) using Image-J software. The surface plasmon resonance of the 2-D In-NPs was estimated from Raman scattering and absorbance measurements. Measurements of optical reflectance and external quantum efficiency revealed that near-field and far-field plasmonic effects depended on the thickness of the spacer and capping layers. The influence of these phenomena on photovoltaic performance was confirmed in terms of photovoltaic current density-voltage under AM 1.5 G illumination. The application of a 90-nm thick SiO2 anti-reflective layer was shown to enhance conversion efficiency by 23.85% (compared to the bare reference cell), and the inclusion of In-NPs between an 18-nm thick spacer layer and 72-nm thick capping layer extended this improvement to 34.16%.

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