Plasmon terahertz response of a slot diode with a two-dimensional electron channel

Abstract

High-frequency response of field-effect transistors and diodes with two-dimensional electron channels is strongly affected by plasma oscillations in the channel. This phenomenon in its various manifestations can be used for the detection, frequency multiplication and generation of terahertz radiation. One of the main parameters of a device, which determines its high-frequency properties, is the device impedance. We calculate here the impedance of a slot diode with conductively contacted two-dimensional electron channel using the full system of the Maxwell equations. In this way, we account for the radiation resistance and inter-contact capacitance from first principles.