Abstract
This paper reviews recent advances in emission of THz radiation from our original dual-grating gate high-electron mobility transistors (HEMT's) originated from two-dimensional plasmons. The dual grating gates can alternately modulate the 2D electron densities to periodi- cally distribute the plasmonic cavities along the channel, acting as an antenna. The sample was fabricated with standard GaAs-based heterostructure material systems, succeeding in emission of broadband (0.5 to 6.5THz) radiation even at room temperature from self-oscillating 2D plas- mons under appropreate DC-bias conditions. Currently maximum available THz output power is estimated to be on the order of 1 to 10W from a single die active area of 75 £ 75m 2 with an excellent power conversion e-ciency of 10 i3 . The fabricated device was introduced to the Fourier-transform infrared spectroscopy as a microchip THz source. Water-vapor absorption spectrum was successfully observed at 300K, which is proven to the standard data provided by NASA.
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